公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN | 1999 IEDM | 0 | 0 | |
2012 | Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy | C. L. Chiou,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2012 | | | |
2002 | Low-threshold ~1.3m GaAsSb quantum well laser | P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2010 | Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy | S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2006 | Mid-infrared InAsPSb/InAsSb quantum-well light emitter | C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
2007 | Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy | S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN | Applied Physics Letters | 33 | 32 | |
2014 | Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity | Y. C. Lin,; M. H. Mao,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN | MIOMD 2014 infrared optoelectronics: materials and devices | | | |
2008 | Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics | Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | Applied Physics Letters | 28 | 23 | |
2008 | Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics | Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) | 28 | 23 | |
2006 | Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN | OPT2006 | | | |
2009 | Nitrogen atomic rearrangement in thermally annealed GaAsSbN | Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN | OPT2009 | | | |
2005 | Numerical simulation on optical properties of GaN/AlN quantum dots | C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN | OPT2005 | | | |
2003 | Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures | Y. M. Chang,; N. A. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN | The 5th Pacific Rim Conference on Lasers and Electro-Optics | 0 | 0 | |
2001 | On the InAs(N)/InGaAs quantum wells | T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN | 2001 Electronics Devices and Materials Symposia | | | |
2005 | Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells | H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN | OPT2005 | | | |
2002 | Optical characterization on InAs/GaAs quantum dots | C. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2004 | Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection | C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN | OPT2004 | | | |
2001 | Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells | G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN | Journal of Applied Physics | 4 | 3 | |
2003 | Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy | G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN | Journal of Electronic Materials | 7 | 7 | |
2006 | Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy | D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN | OPT2006 | | | |