公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2002 | Raman scattering characterization of InAsN bulk film on (100) InP substrates | D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2010 | Raman scattering in InAsPSb quaternary alloys | J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2010 | Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy | J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | | | |
2013 | Raman spectroscopy of GaAsPSb alloys | C. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN | IEDMS 2013, international electron devices and materials symposium | | | |
2003 | Resonant-cavity light-emitting diodes with coupled cavity | L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN | Electron devices and materials symposium | | | |
2012 | Short range structure of dilute nitride GaAsSbN | H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN | Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications | 0 | | |
2013 | Short range structure of dilute nitride GaAsSbN | H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN | Physics and Mechanics of New Materials and Their Applications | 0 | | |
2011 | Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy | Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | 2011 International electron devices and materials symposia | | | |
2012 | Slanted InAs nanowires gorwn by GSMBE | W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2012, optics and photonics Taiwan, international conference 2012 | | | |
2001 | Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE | D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN | Middle Infrared Coherent Sources MICS’01 International Workshop | | | |
1999 | Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy | J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN | Journal of Crystal Growth | 3 | 2 | |
2002 | Structural properties and Raman modes of InAsN bulk films on (100) InP substrates | D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN | OPT’02 | | | |
2011 | Structural properties of (111)B GaAsSb grown on GaAs substrates | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | 18th American conference on crystal growth and epitaxy, ACCGE-18 | | | |
2014 | Structural properties of GaAsSb grown on (111)B GaAs | Y. H. Lin,; S. C. Chen,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN | 21th Symposium on nano device technology | | | |
2012 | Structural properties of GaAsSb grown on GaAs | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2012 | Structural properties of InAs nanowires grown by GSMBE | W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | | | |
1999 | Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells | G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN | Optics and Photonics/Taiwan'99 | | | |
2014 | Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer | T. H. Huang,; W. C. Chen,; K. C. Chen,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2014 | Study of twin defects in (111)B GaAsSb by X-ray diffraction | S. C. Chen,; Y. H. Lin,; H. H. Lin,; HAO-HSIUNG LIN | IEDMS 2014, international electron devices and materials symposium | | | |
2004 | Study on high-power resonant-cavity light-emitting diodes | L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN | OPT 2004 | | | |