公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2012 | MBE growth of InAs nanowires on Si | L. H. Chen,; Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2004 | MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications | G. Tsai,; H. H. Lin; HAO-HSIUNG LIN | OPT 2004 | | | |
2007 | Narrow Band Gap Semiconductor | H. H. Lin; J. B. Kuo; JAMES-B KUO | Wiley's Electrical Engineering Encyclopedia | | | |
2014 | One-Pot Synthesis of Hierarchically Assembled Microspheres Consisting of Nanoporous Nanosheets of Highly Exposed (001)-Facets TiO2 for Dye-Sensitized Solar Cells, | J. D. Peng; C. T. Lee; H. H. Lin; C. M. Tseng; K. C. Ho | | | | |
2015 | One-pot Synthesis of Pore Size-tunable Mesoporous Anatase TiO2 Spheres Consisting of Highly Exposed (001)-Facets Nanosheets for Cobalt-based Dye-Sensitized Solar Cells, | J. D. Peng; H. H. Lin; K. C. Ho | | | | |
2007 | Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy | L. C. Chou; H. H. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2010 | Optical properties of As-rich InAsSb/InAsPSb multiple quantum well | C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2014 | Phosphotungstic Acid Modified TiO2 Nanosheets as a Semiconductor Film for Enhanced Performance of Dye-Sensitized Solar Cells, | J. D. Peng; H. H. Lin; C. T. Lee; C. M. Tseng; K. C. Ho | | | | |
2013 | Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs | Y. R. Chen,; H. H. Lin; HAO-HSIUNG LIN | 40th international symposium on compound semiconductors (ISCS 2013) | | | |
2012 | Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution | S. H. Li; C. J. Wu; H. H. Lin; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | | | |
2007 | Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors | Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2009 | The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells | J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |