公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2013 | Short range structure of dilute nitride GaAsSbN | H. H. Lin; C. L. Chiou; Y. T. Lin; T. C. Ma; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | Physics and Mechanics of New Materials and Their Applications | |||
2012 | Short range structure of dilute nitride GaAsSbN | H. H. Lin; C. L. Chiou; Y. T. Lin; T. C. Ma; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications | |||
2001 | Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE | D. K. Shih; H. H. Lin; Y. H. Lin; HAO-HSIUNG LIN | Middle Infrared Coherent Sources MICS’01 International Workshop | |||
2002 | Structural properties and Raman modes of InAsN bulk films on (100) InP substrates | D. K. Shih; H. H. Lin; Y. F. Chen; HAO-HSIUNG LIN | OPT’02 | |||
2010 | Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy | Y. R. Lan; C. J. Wu; H. H. Lin; L. Y. Chang; Z. C. Feng; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan | |||
2003 | Temperature dependence of photoreflectance in InAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; C. W. Chang; C. H. Kao; H. H. Lin; G. J. Jan; J. Lee; HAO-HSIUNG LIN | Applied Physics Letters | 18 | ||
2011 | Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction | F. Cheng; T. Fa; S. Yao; C. J. Wu; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | 3 | ||
2005 | The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well | G. L. Wang; Y. S. Huang; H. H. Lin; C. H. Chan; HAO-HSIUNG LIN | OPT 2005 | |||
2001 | Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells | C. H. Lee; Y. H. Chang; C. F. Huang; M. Y. Huang; H. H. Lin; C. P. Lee; HAO-HSIUNG LIN | Chinese Journal of Physics | |||
2002 | V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | 2001 MRS Fall Meeting |