公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; MINGHWEI HONG ; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others | Electron Device Letters, IEEE | | | |
1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; MINGHWEI HONG ; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ | Journal of Applied Physics | | | |
1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; MINGHWEI HONG ; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ | Journal of Applied Physics | | | |
1995 | GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES | Passlack, M; MINGHWEI HONG ; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ | Compound Semiconductors, 1994 | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | MINGHWEI HONG ; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |