公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Chang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 19 | 19 | |
2011 | Epitaxial stabilization of a monoclinic phase in Y<inf>2</inf>O<inf>3</inf> films on c-plane GaN | Chang, W.H.; Chang, P.; Lee, W.C.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 20 | 20 | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growth | Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 14 | 14 | |
2009 | High 庥 dielectric single-crystal monoclinic Gd<inf>2</inf>O<inf>3</inf> on GaN with excellent thermal, structural, and electrical properties | Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; MINGHWEI HONG | Journal of Crystal Growth | 49 | 50 | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al <inf>2</inf> O <inf>3</inf> as gate dielectrics | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Shiu, K.H.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | Device Research Conference | 1 | 0 | |
2009 | Inversion-channel GaN MOSFET using atomic-layer-deposited Al <inf>2</inf>O<inf>3</inf> as gate dielectric | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Chang, Y.H.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 2 | 0 | |
2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Advanced Materials | 60 | 57 | |