公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG | Applied Physics Letters | 79 | 80 | |
2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 33 | 29 | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 8 | |
2022 | Perfecting high-κ/Ge and /InGaAs interfaces - push for ultimate CMOS and emerging cryogenic electronic devices | Young, L. B.; Lin, Y. H.G.; Wan, H. W.; Cheng, Y. T.; CHIA-KUEN CHENG ; CHIH-HUNG HSU; Pi, T. W.; Kwo, J.; Hong, M. | Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 | 0 | 0 | |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 14 | 15 | |
2013 | Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> on GaN | Chang, W.-H.; Wu, S.-Y.; Lee, C.-H.; Lai, T.-Y.; Lee, Y.-J.; Chang, P.; Hsu, C.-H.; Huang, T.-S.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | ACS Applied Materials and Interfaces | 19 | 18 | |
2001 | Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopy | Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 11 | 11 | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 188 | 212 | |
2003 | Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitor | Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 9 | | |
2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition | Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 0 | 0 | |
2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 3 | 3 | |
2012 | Room temperature ferromagnetic behavior in cluster free, Co doped Y <inf>2</inf>O <inf>3</inf> dilute magnetic oxide films | Wu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; SSU-YEN HUANG ; MINGHWEI HONG | Applied Physics Letters | 8 | 7 | |
2009 | Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics | Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications | 8 | 0 | |
2008 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric | Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | 18 | 17 | |
2007 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric | Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 4 | 4 | |
2010 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | 36 | 37 | |
2009 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 1 | 0 | |