Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2000 | Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY | Journal of Vacuum Science & Technology B | | | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY | Applied Physics Letters | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
1998 | Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces | MINGHWEI HONG ; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY | Journal of Vacuum Science & Technology B | | | |
1999 | The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation | Kwo, J; MINGHWEI HONG ; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC | MRS Proceedings | | | |