公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 26 | 23 |