公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 11 | 10 | |
2006 | Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics | Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 22 | 18 | |
2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
2009 | Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid | Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |
1996 | Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method | Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | IEEE Photonics Technology Letters | 7 | 7 | |
2009 | Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 9 | |
2010 | Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material | Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 26 | 24 | |
2014 | Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode | Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 15 | 14 | |
2013 | Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
2014 | Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
2013 | Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale | 14 | 14 | |
1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU | IEE Proceedings, Part G: Circuits, Devices and Systems | | | |
1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G. | Circuits, Devices and Systems, IEE Proceedings G | | | |
2017 | Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level | Hou, W.-T.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 6 | 5 | |
2014 | Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 32 | 29 | |
2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
2020 | Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode | Hsu, T.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
2013 | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers | Lee, C.-W.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 3 | 3 | |
1998 | Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates | Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 7 | 6 | |
2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |