公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
2014 | Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
2013 | Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale | 14 | 14 | |
1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G. | Circuits, Devices and Systems, IEE Proceedings G | | | |
1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU | IEE Proceedings, Part G: Circuits, Devices and Systems | | | |
2017 | Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level | Hou, W.-T.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 6 | 5 | |
2014 | Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 32 | 29 | |
2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
2020 | Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode | Hsu, T.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
2013 | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers | Lee, C.-W.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 3 | 3 | |
1998 | Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates | Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 7 | 6 | |
2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |
1986 | Relationship between mobile charges and interface trap states in silicon mos capacitors | Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
1996 | Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process | Lu, W.-S.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 11 | 9 | |
2014 | Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 14 | 13 | |
1992 | Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices | Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 13 | 12 | |
2014 | Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 11 | 13 | |
2013 | Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
2008 | Shallow level trap formation in SiO2 induced by high field and thermal stresses | Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 2 | 1 | |
2010 | Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure | Chen, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 3 | 3 | |