Skip navigation
中文
English
DSpace
CRIS
首頁
單位
研究人員
研究成果檢索
分類瀏覽
單位
研究人員
研究成果檢索
學術出版
幫助
登入
中文
English
NTU Scholars
研究成果檢索
瀏覽 的方式: 作者
J. B. Kuo
或是輸入前幾個字:
跳到:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
排序方式:
升冪
降冪
結果/頁面
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
作者/紀錄:
全部
1
5
10
15
20
25
30
35
40
45
50
顯示 73 到 92 筆資料,總共 103 筆
< 上一頁
下一頁 >
公開日期
標題
作者
來源出版物
scopus
WOS
全文
2012
Modeling Hot-Carrier-Induced Reliability of Poly-silicon Thin Film Transistors
L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
IEEE International Conference on Electron Devices and Solid State Circuit
0
0
2001
Modeling of Single-Transistor Latch Behavior in Partially-Depleted (PD) SOI CMOS Devices Using a Concise SOI-SPICE Model
J. B. Kuo; S. C. Lin; JAMES-B KUO
International Conference on Semiconductor IC Technology (ICSICT)
1
0
2007
Modeling the Drain Current of DG FD SOI NMOS Devices with N+/P+ Top/Bottom Gate
C. H. Hsu; J. B. Kuo; JAMES-B KUO
Electron Devices and Solid State State Circuits (EDSSC) Conf
0
0
2010
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
EUROSOI
2009
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
J. S. Su; J. B. Kuo; JAMES-B KUO
Compact TFT Modeling Workshop
0
0
2011
Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model
S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
International Semiconductor Device Research Symposium ISDRS
1
0
2003
Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure
S. C. Lin; J. B. Kuo; JAMES-B KUO
IEEE Transactions on Electron Devices
74
64
2014
MTCMOS Low-Power Design Technique (LPDT) for Low-Voltage Piepelined Mcoprocessor Circuit
C. B. Hsu; J. B. Kuo; JAMES-B KUO
ISIC
1
0
2014
MTCMOS low-power optimization technique (LPOT) for 1V pipelined RISC CPU circuit
C. B. Hsu; Y. S. Hong; J. B. Kuo; JAMES-B KUO
ICECS
1
0
2007
Narrow Band Gap Semiconductor
H. H. Lin; J. B. Kuo; JAMES-B KUO
Wiley's Electrical Engineering Encyclopedia
2001
Novel 0.8V True-Single-Phase-Clocking (TSPC) Latches Using PD-SOI DTMOS Techniques for Low-Voltage CMOS VLSI Circuits
J. B. Kuo; T. Y. Chiang; JAMES-B KUO
IEEE SOI Conference Proceedings
0
0
2013
Novel Power Consumption Reduction strategy Using Mixed-Vth Cells for Optimizaing the Cells on Critical Paths for Low-Power SOC
G. Lin; J. B. Kuo; JAMES-B KUO
International Conference on EECS
2003
Novel Sub-1V CMOS Domino Dynamic Logic Circuit Using a Direct Bootstrap (DB) Technique for Low-voltage CMOS VLSI
P. C. Chen; J. B. Kuo; JAMES-B KUO
International Symposium on Circuits and Systems
0
0
2014
Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO
ISIC
1
0
2004
PD SOI-Technology SPICE Models
J. B. Kuo; S. C. Lin; JAMES-B KUO
Wiley's Texbook by J. B. Kuo: SOI CMOS VLSI Devices
0
0
2014
Power consumption optimization methodology (PCOM) for low-power/ low-voltage 32-bit microprocessor circuit design via MTCMOS
C. B. Hsu; J. B. Kuo; JAMES-B KUO
MWSCAS
1
0
2009
Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device
J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
EUROSOI
2010
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
Solid-State Electronics
1
1
2008
Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device
I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
IEEE Transactions Electron Devices
3
1
2007
STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices
I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO
IEEE International Semicondcutor Device Research Symp (ISDRS)
3
0