公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | Characteristics of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface: Structures and compositions | Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Lu, Z.H.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 16 | 15 | |
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Applied Physics Letters | 268 | 248 | |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 13 | 14 | |
2005 | High-quality nanothickness single-crystal [formula omitted] film grown on Si(111) | Hong, M.; Kortan, A.R.; Chang, P.; Huang, Y.L.; Chen, C.P.; Chou, H.Y.; Lee, H.Y.; Kwo, J.; Chu, M.-W. ; Chen, C.H.; Goncharova, L.V.; Garfunkel, E.; Gustafsson, T. | Applied Physics Letters | 2 | 16 | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG | Applied Physics Letters | 46 | 38 | |
2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M.; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y.; MINGHWEI HONG | Applied Physics Letters | 83 | 81 | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Applied Physics Letters | 15 | 17 | |
2001 | New phase formation of Gd<inf>2</inf>O<inf>3</inf>films on GaAs(100) | Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 10 | 10 | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 35 | 40 | |
2000 | Structural modifications of the Gd<inf>2</inf>O<inf>3</inf>(110) films on GaAs(100) | Steiner, C.; Bolliger, B.; Erbudak, M.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Physical Review B - Condensed Matter and Materials Physics | 10 | 10 | |
2000 | Structure of epitaxial Gd<inf>2</inf>O<inf>3</inf> films and their registry on GaAs(100) substrates | Bolliger, B.; Erbudak, M.; Hong, M.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; MINGHWEI HONG | Surface and Interface Analysis | 8 | | |
2002 | Structure of Gd<inf>2</inf>O<inf>3</inf> films epitaxially grown on GaAs(100) and GaN(0001) surfaces | Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG | Surface and Interface Analysis | 18 | 18 | |
2006 | Structure of Sc <inf>2</inf>O <inf>3</inf> films epitaxially grown on 帢-Al <inf>2</inf>O <inf>3</inf> (0001) | Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG | Applied Physics Letters | | 0 | |