公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate | MINGHWEI HONG ; Kwo, Jueinai; Chen, Chih-Ping; Chang, Shiang-Pi; Lee, Wei-Chin | | | | |
2011 | Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; MINGHWEI HONG ; Kwo, Jueinai | Applied Physics Express | | | |
2014 | Single crystal Gd 2 O 3 epitaxially on GaAs (111) A | Chiang, Tsung-Hung; Wu, Shao-Yun; Huang, Tsung-Shiew; Hsu, Chia-Hung; Kwo, Jueinai; MINGHWEI HONG | CrystEngComm | | | |
2012 | Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; K. Wertheim, Gunther; MINGHWEI HONG ; Kwo, Jueinai | Journal of the Physical Society of Japan | | | |
2011 | 利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究 | Huang, Tsung-Shiew; MINGHWEI HONG ; Chang, Pen; Kwo, Jueinai; 張翔筆 | | | | |