公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Band offsets and charge storage characteristics of atomic layer deposited high- k Hf O<inf>2</inf> Ti O<inf>2</inf> multilayers | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lin, C.-H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Applied Physics Letters | | | |
1989 | BANDWIDTH-POWER PERFORMANCE ANALYSIS OF MULTI-h PHASE-CODED MOD U LATIONS WITH ASYMMETRIC M0DULATlON INDICES | Hwang, H.K.; Lee, L.S.; Chen, S.H. | ELECTRONICS LETTERS 25th May 1989 Vol. 25 No. 11 | | | |
2005 | The characteristic of HfO2 on strained SiGe | Chen, T.C.; Lee, L.S.; Lai, W.Z.; Liu, C.W. | Materials Science in Semiconductor Processing | | | |
2007 | Charge storage characteristics of atomic layer deposited RuO<inf>x</inf> nanocrystals | Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Lee, L.S.; Yang, J.R.; Tsai, M.J.; JER-REN YANG | Applied Physics Letters | | | |
2007 | Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications | Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. | Semiconductor Science and Technology 22: | | | |
2007 | Charge trapping characteristics of atomic-layer-deposited HfO<inf>2</inf> films with Al<inf>2</inf>O<inf>3</inf> as a blocking oxide for high-density non-volatile memory device applications | Maikap, S.; Lee, H.Y.; Wang, T.-Y.; Tzeng, P.-J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Semiconductor Science and Technology | | | |
2004 | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W. | Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the | | | |
2004 | Electrical and optical reliability improvement of HfO<inf>2</inf> gate dielectric by deuterium and hydrogen incorporation | CHEE-WEE LIU ; Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2007 | High-�e HfO<inf>2</inf>/TiO<inf>2</inf>/HfO<inf>2</inf> multilayer quantum well flash memory devices | Maikap, S.; Tzeng, P.J.; Tseng, S.S.; Wang, T.-Y.; Lin, C.H.; Lee, H.Y.; Wang, C.C.; Tien, T.C.; Lee, L.S.; Li, P.W.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2008 | Highly thermally stable and reproducible of ALD RuO<inf>2</inf> nanocrystal floating gate memory devices with large memory window and good retention | Maikap, S.; Banerjee, W.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Kao, M.-J.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2008 | Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Electrochemical and Solid-State Letters | | | |
1993 | Novel Fixed-Point Error Analysis of Fast Hartley Transform | Chen, G.S.; Wu, Ja-Ling; Duh, W.J.; Lee, L.S. | Signal Processing | | | |
2001 | Paleoseismic Study of the Southern Part of the Chelungpu Fault | Chen, W.S.; Lee, K.J.; Lee, L.S.; Chen, Y.G.; Chang, H.C. | American Geophysical Union | | | |
2001 | Paleoseismology of the Chelungpu fault | Chen, W.S.; Lee, K.J.; Lee, L.S.; Chen, Y.G.; Chang, H.C.; Lee, Y.H.; Sung, Q. C.; D.J. Ponti; C. Prentice | The International Meeting on both Sea-level changes and Coastal Evolution and Neotectonics (INQUA) | | | |
2001 | Paleoseismology of the Chelungpu fault, Central Taiwan | Chen, W.S.; Chen, Y.G.; Chang, H.C.; Lee, Y.H.; Lee, K.J.; Lee, L.S.; D.J. Ponti; C. Prentice | 2001 Joint Geosciences Assambly (JGA)- | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | CHEE-WEE LIU ; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
1990 | Signal Extrapolation from Harfley transform magnitudes | Chen, G.S.; Wu, Ja-Ling; Lee, L.S. | Electronics Letters | | | |
2006 | Spoken document retrieval and summarization | Chen, B.; Wang, H.M.; Lee, L.S.; LIN-SHAN LEE | Advances in Chinese Spoken Language Processing | 2 | 0 | |
2005 | The characteristic of HfO2 on strained SiGe | CHEE-WEE LIU ; Chen, T.C.; Lee, L.S.; Lai, W.Z.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |