公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
2018 | Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation Applications | Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S. | 2018 IEEE Electron Devices Technology and Manufacturing Conference | 2 | 0 | |
2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | | | |
2015 | Ferroelectricity of HfZrO<inf>2</inf> in energy landscape with surface potential gain for low-power steep-slope transistors | Lee, M.H.; Wei, Y.-T.; Liu, C.; Huang, J.-J.; Tang, M.; Chueh, Y.-L.; Chu, K.-Y.; Chen, M.-J.; Lee, H.-Y.; Chen, Y.-S.; Lee, L.-H.; Tsai, M.-J.; MIIN-JANG CHEN | IEEE Journal of the Electron Devices Society | | | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Applied Surface Science | | | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W. | Applied Surface Science | | | |
2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | | |
2004 | Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2017 | Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design) | Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T. | Future Technologies Conference | 0 | 0 | |
2006 | Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2005 | Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | | | |
2017 | Hidden Antipolar Order Parameter and Entangled Néel-Type Charged Domain Walls in Hybrid Improper Ferroelectrics | Lee, M.H.; Chang, C.-P.; Huang, F.-T.; Guo, G.Y.; Gao, B.; Chen, C.H.; Cheong, S.-W.; Guo G.-Y. | Physical Review Letters | 33 | 31 | |
2006 | Hole confinement at Si/SiGe heterojunction
of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | CHEE-WEE LIU ; Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; CHEE-WEE LIU | Solid-State Electronics | | | |
2007 | Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2019 | Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode | Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO | 2019 Electron Devices Technology and Manufacturing Conference | | | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; LiuCW | Electron Devices Meeting, 1999. IEDM | 0 | 0 | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHING-FUH LIN | International Electron Devices Meeting, IEDM | | | |