公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Mechanically Strained Strained-Si NMOSFETs | CHEE-WEE LIU ; Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2004 | Mechanically strained strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2006 | Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate | CHEE-WEE LIU ; Yeo, C.C.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; Cho, B.J.; CHEE-WEE LIU | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | | | |
2008 | Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition | Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; Liu, C.W. | Applied Surface Science | | | |
2008 | Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; CHEE-WEE LIU | Applied Surface Science | | | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | | | |
2001 | Novel Methods to Incorporate Deuterium in the MOS Structures | Lee, M.H.; Lin, C.-H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2001 | Novel methods to incorporate deuterium in the MOS structures | CHEE-WEE LIU ; Lee, M.H.; Lin, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2000 | A Novel Photodetector Using MOS Tunneling Structures | Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; LiuCW | IEEE Electron Device Letters | | | |
2000 | Novel photodetector using MOS tunneling structures | CHEE-WEE LIU ; Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2005 | Novel schottky barrier strained germanium PMOS | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
2001 | Oxide roughness enhanced reliability of MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | | | |
2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
2006 | Phase field modeling of convective and morphological instability during directional solidification of an alloy | Lan, C.W.; Lee, M.H.; Chuang, M.H.; Shih, C.J.; LanCW | Journal of Crystal Growth | 30 | 26 | |
2006 | Phase field modeling of excimer laser crystallization of thin silicon films on amorphous substrates | Shih, C.J.; Fang, C.H.; Lu, C.C.; Wang, M.H.; Lee, M.H.; CHUNG-WEN LAN | Journal of Applied Physics 100 | 11 | 10 | |
2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 91 | 0 | |
2006 | Promising a-Si:H TFTs with high mechanical reliability for flexible display | Lee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H. | International Electron Devices Meeting | 11 | 0 | |
2015 | Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies | Lee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C. | International Electron Devices Meeting | 87 | 0 | |
2005 | Quantitative phase field simulation of deep cells in directional solidification of an alloy | Lan, C.W.; Shih, C.J.; Lee, M.H.; LanCW | Acta Materialia | 33 | 31 | |