公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | The interface properties of SiO<inf>2</inf>/strained-si with carbon incorporation surface channel MOSFETs | CHEE-WEE LIU ; Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2006 | Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si nMOSFETs with HfO<inf>2</inf> gate dielectric | CHEE-WEE LIU ; Yeo, C.C.; Cho, B.J.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2005 | Threading dislocation induced low frequency noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2005 | Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs | Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | |
2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |