公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Applied Physics Letters | 15 | 17 | |
1997 | Near-bandgap ultrafast optical responses of furnaceannealed aresonic-ion-implanted GaAs | Lin, G.-R.; Pan, C.-L.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | Lasers and Electro-Optics Society Annual Meeting-LEOS | | | |
2006 | Non-audit Service and Auditor Independence: An Examination of the Procomp Effect | Duh, Rong-Ruey ; Lee, W.C.; Hua, C. Y. | 14th Annual Conference on Pacific Basin Finance, Economics and Accounting | | | |
2002 | Notch tensile properties of laser-surface-annealed 17-4 PH stainless steel in hydrogen-related environments | Tsay, L.W.; Lee, W.C.; Shiue, R.K.; Wu, J.K.; REN-KAE SHIUE | Corrosion Science | | | |
1998 | Observation of coulomb staircases in arsenic precipitates in low-temperature grown GaAs | JEN-CHEN FAN ; Yong, B.L.; Yang, Y.C.; Chen, Y.F.; Lee, W.C.; Hsu, T.M. | Physica Status Solidi (A) Applied Research | | | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG | Applied Physics Letters | 22 | 23 | |
2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 12 | 13 | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 8 | |
2012 | Room temperature ferromagnetic behavior in cluster free, Co doped Y <inf>2</inf>O <inf>3</inf> dilute magnetic oxide films | Wu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; SSU-YEN HUANG ; MINGHWEI HONG | Applied Physics Letters | 8 | 7 | |
2009 | Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics | Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications | 8 | 0 | |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process | Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 15 | 15 | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
2006 | Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001) | Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG | Applied Physics Letters | 25 | 26 | |
2000 | Synthesis of 60- and 72 kDa heat shock proteins in early porcine embryogenesis | King, Y.T.; Lee, W.C.; Gao, M.S.; Wang, J.L.; Tu, C.F.; SHINN-CHIH WU ; Kuo, Y.H. | Animal Reproduction Science | | | |
2011 | The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layer | Lin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Crystal Growth and Design | 14 | 14 | |
2012 | The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al <inf>2</inf>O <inf>3</inf> buffer layer | Liu, W.-R.; Lin, B.H.; Yang, S.; Kuo, C.C.; Li, Y.-H.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | CrystEngComm | 13 | 12 | |
2008 | Time dependent preferential sputtering in the HfO2 layer on Si(100) | Chang, S.J.; Lee, W.C.; Hwang, J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Thin Solid Films | 19 | 20 | |
2008 | Transmission electron microscopy characterization of HfO <inf>2</inf>/GaAs(001) heterostructures grown by molecular beam epitaxy | Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; MINGHWEI HONG ; Kwo J. | Applied Physics A: Materials Science and Processing | 9 | 8 | |
2013 | Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y<inf>2</inf>O<inf>3</inf>-buffered Si (111) | Kuo, C.C.; Liu, W.-R.; Lin, B.H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Optics Express | 2 | 2 | |