公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study | Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanoscale Research Letters | | 0 | |
2007 | III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics | Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 91 | 86 | |
2006 | Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>As | Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 142 | 124 | |
2007 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric | Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
2013 | Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study | Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 18 | 17 | |