公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation | CHEE-WEE LIU ; Chen, Y.-Y.; Chen, J.Y.; Hsu, R.-J.; Ho, W.S.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU | Journal of the Electrochemical Society | | | |
2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | | | |
2004 | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W. | Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S. | Lasers and Electro-Optics, 2004. (CLEO). Conference on | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | CHEE-WEE LIU ; Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHEE-WEE LIU | OSA Trends in Optics and Photonics Series | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | CHIEH-HSIUNG KUAN ; Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHIEH-HSIUNG KUAN | OSA Trends in Optics and Photonics Series | | | |
2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | Liao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | | |
1996 | Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2005 | Electron mobility enhancement using ultrathin pure Ge on Si substrate | CHEE-WEE LIU ; Yeo, C.C.; Cho, B.J.; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2005 | Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate | Yeo, Chia Ching; Cho, Byung Jin; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W. | IEEE Electron Device Letters | | | |
2011 | Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface | CHEE-WEE LIU ; Ho, W.S.; Deng, Y.; Chen, Y.-Y.; Cheng, T.-H.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU | Thin Solid Films | | | |
1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | CHEE-WEE LIU ; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | | | |
1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | CHEE-WEE LIU ; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | | | |
2004 | Evidence of SiSiGe heterojunction roughness scattering | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU | Applied Physics Letters | | | |
2010 | Extrinsic effects of indirect radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Lee, C.-H.; Cheng, T.-H.; Chen, Y.-Y.; Peng, K.-L.; Chan, S.-T.; Liu, C.W.; Yuji, Y.; Bernd, T.; CHEE-WEE LIU | ECS Transactions | | | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W. | Applied Surface Science | | | |
2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
2014 | Gate-all-around Ge FETs | CHEE-WEE LIU ; Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU | ECS Transactions | | | |
2014 | Ge gate-all-around FETs on Si | CHEE-WEE LIU ; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | | | |
2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | | |