公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2021 | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | Chuang Y; Liu C.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | IEEE Electron Device Letters | 13 | 11 | |
2021 | Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation | Chuang Y; Liu C.-Y; Kao H.-S; Tien K.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | ACS Applied Electronic Materials | 10 | 8 |