公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | C-V and G-V characterisation of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN capacitor with low interface state density | Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 14 | 14 | |
1996 | C-V and G-V characterization of in-situ fabricated Ga<inf>2</inf>O<inf>3</inf>-GaAs interfaces for inversion/accumulation device and surface passivation applications | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 35 | 36 | |
2000 | Characteristics of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface: Structures and compositions | Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Lu, Z.H.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 16 | 15 | |
1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Solid-State Electronics | 167 | 153 | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | IEEE Electron Device Letters | 60 | 57 | |
2005 | Depth-profile study of the electronic structures at Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) and Gd<inf>2</inf>O<inf>3</inf>-GaN interfaces by X-ray photoelectron spectroscopy | Lay, T.S.; Liao, Y.Y.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2002 | Electrical characteristics of ultrathin Pt/Y<inf>2</inf>O<inf>3</inf>/Si capacitor with rapid post-metallisation annealing | Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 0 | 0 | |
2001 | Energy-band parameters at the GaAs- and GaN-Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) interfaces | Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG | Solid-State Electronics | 83 | 81 | |
2000 | Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd<inf>2</inf>O<inf>3</inf> on GaAs(001) | Nelson, E.J.; Woicik, J.C.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 12 | 10 | |
1998 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a dielectric insulator for GaAs device applications | Lay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
1999 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> )/GaAs power MOSFETs | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Electronics Letters | 18 | 18 | |
1998 | GaAs MOSFET using MBE-grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate oxide | Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | IEE Proceedings: Circuits, Devices and Systems | 5 | 5 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | IEEE Electron Device Letters | 225 | | |
2004 | GaAs-based metal-oxide semiconductor field-effect transistors with Al <inf>2</inf> O <inf>3</inf> gate dielectrics grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | Journal of Electronic Materials | 17 | | |
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Applied Physics Letters | 268 | 248 | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG | Applied Physics Letters | 46 | 38 | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | 2002 12th International Conference on Molecular Beam Epitaxy | 1 | 0 | |
- | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M.; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y.; MINGHWEI HONG | Applied Physics Letters | 83 | 81 | |
1998 | Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells | Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG | IEEE Journal of Quantum Electronics | 2 | 2 | |