公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2002 | DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG | 24th Annual Gallium Arsenide Integrated Circuit Symposium, 2002 | | | |
1995 | Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs | Mills Jr, AP; Hong, M; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE; MINGHWEI HONG | Journal of Applied Physics | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; MINGHWEI HONG | Electrochemical Society ( ECS ) Proceedings | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG | Device Research Conference Digest 1997 | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
2005 | Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan | Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG | Journal of Crystal Growth | | | |
1998 | Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide | Hong, M; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2005 | Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy | Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Journal of Crystal Growth | | | |
1993 | Design optimization for high power and high speed surface-emitting lasers | Gamelin, J; Lin, J; Lau, KY; Hong, M; Mannaerts, JP; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
1994 | Dielectric properties of electron-beam deposited Ga2O3 films | Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG | Applied Physics Letters | | | |
1994 | Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells | Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG | Photonics Technology Letters, IEEE | | | |
1989 | Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation | Bode, M; Ourmazd, A; Rentschler, JA; Hong, M; Feldman, LC; Mannaerts, JP; MINGHWEI HONG | MRS Proceedings | | | |
1991 | Doping and free-carrier loss in cw all-epitaxial surface-emitting laser diodes | Fischer, RJ; Wang, YH; Hong, M; Mannaerts, JP; Cho, AY; Gamelin, J; Wang, S; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
2002 | Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing | Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
1991 | Electron cyclotron resonance plasma preparation of GaAs substrates for molecular beam epitaxy | Choquette, Kent D; Hong, M; Freund, Robert S; Mannaerts, JP; Wetzel, Robert C; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | MRS Proceedings | | | |
2001 | Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG | APS Meeting Abstracts | | | |
2001 | Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | Solid-State Electronics | | | |
1996 | Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates | Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG | International Electron Devices Meeting, 1996 | | | |