公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics | Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG | Applied Physics Letters |