公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others | APS Meeting Abstracts | | | |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; MINGHWEI HONG ; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL | Applied Physics Letters | | | |
1998 | Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation | MINGHWEI HONG ; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM | MRS Proceedings | | | |
1998 | Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces | MINGHWEI HONG ; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY | Journal of Vacuum Science & Technology B | | | |
1999 | The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation | Kwo, J; MINGHWEI HONG ; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC | MRS Proceedings | | | |