公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1995 | Photoluminescence study of highly mismatched In <inf>0.53</inf> Ga <inf>0.47</inf> As epilayers grown on InP-coated GaAs substrates | Chen, Y.F.; Shen, J.L.; Chang, I.M.; Chang, S.Z.; SI-CHEN LEE ; YANG-FANG CHEN | Journal of Applied Physics | 2 | 2 | |
1994 | Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates | Shen, J.L.; Chang, I.M.; Shu, Y.M.; Chen, Y.F.; Chang, S.Z.; YANG-FANG CHEN ; SI-CHEN LEE | Physical Review B | 37 | 33 | |
2001 | Reflectivity and photoluminescence studies in Bragg reflectors with absorbing layers | Shen, J.L.; Chang, C.Y.; Liu, H.C.; Chou, W.C.; Chen, Y.F.; Jung, T.; Wu, M.C.; YANG-FANG CHEN | Semiconductor Science and Technology | 6 | 5 | |
1999 | Studies of far-infrared magneto-photoconductivity of D- centers in GaAs/AlxGa1-xAs multiple quantum wells | Shen, J.L.; Lin, T.Y.; Chen, Y.F.; Chang, Y.H.; YUAN-HUEI CHANG ; YANG-FANG CHEN | Solid State Communications | 1 | 1 | |
1994 | Study of asymmetric broadening of Raman scattering in InxGa1-xAs/InP and InxGa1-xAs/GaAs epilayers | Shen, J.L.; Chang, S.Z.; Lee, S.C.; Chen, Y.F.; YANG-FANG CHEN | International Conference on Indium Phosphide and Related Materials | 1 | | |
1995 | Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance | Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; YANG-FANG CHEN ; HAO-HSIUNG LIN | Applied Physics Letters | 5 | 5 | |
2001 | Temperature dependence of the reflectivity in absorbing Bragg reflectors | Shen, J.L.; Chang, C.Y.; Chou, W.C.; Wu, M.C.; Chen, Y.F.; YANG-FANG CHEN | Optics Express | 13 | 10 | |