公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; MINGHWEI HONG ; Kwo, J | Microelectronic Engineering | | | |
2012 | Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy | Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |