公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1996 | Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures | Chin, A.; Chen, W.J.; Ganikhanov, F.; Lin, G.-R.; Shieh, J.-M.; Pan, C.-L.; Hsieh, K.C.; GONG-RU LIN | Applied Physics Letters | | | |
1996 | Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures | Chin, A.; Chen, W.J.; Ganikhanov, F.; Lin, G.-R.; Shieh, J.-M.; Pan, C.-L.; Hsieh, K.C.; GONG-RU LIN | Applied Physics Letters | | | |
2011 | Resonance-enhanced surface emission of silicon nanocrystal by 2nd-order distribution feedback structures | Tseng, C.-K.; Huang, J.R.; Hung, H.-W.; Yang, Y.-T.; Lee, K.-Y.; Wu, T.-H.; Lin, G.-R.; Shieh, J.-M.; Lee, M.-C.M.; GONG-RU LIN | 2011 Int. Quantum Electron. Conf., IQEC 2011 and Conf. Lasers and Electro-Optics, CLEO Pacific Rim 2011 Incorporating the Australasian Conf. Optics, Lasers and Spectroscopy and the Australian Conf. | | | |
2016 | Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation | Luo, S.; Eisler, C.; Wong, T.-H.; Xiao, H.; Lin, C.-E.; Wu, T.-T.; Shen, C.-H.; Shieh, J.-M.; Tsai, C.-C.; Liu, C.-W.; Atwater, H.A.; Goddard, W.A.; Lee, J.-H.; CHEE-WEE LIU ; JIUN-HAW LEE | Acta Materialia | 14 | 13 | |
2019 | Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications | Sung, P.-J.; Chang, C.-Y.; Chen, L.-Y.; Kao, K.-H.; Su, C.-J.; Liao, T.-H.; Fang, C.-C.; Wang, C.-J.; Hong, T.-C.; Jao, C.-Y.; Hsu, H.-S.; Luo, S.-X.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Huang, Y.-M.; Hou, F.-J.; Luo, G.-L.; Huang, Y.-C.; Shen, Y.-L.; Ma, W.C.-Y.; Huang, K.-P.; Lin, K.-L.; Samukawa, S.; Li, Y.; Huang, G.-W.; Lee, Y.-J.; Li, J.-Y.; Wu, W.-F.; Shieh, J.-M.; Chao, T.-S.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |