Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2021 | Modeling dislocation-related reverse bias leakage in GaN p-n diodes | Qwah K.S; Robertson C.A; Wu Y.-R; Speck J.S.; YUH-RENN WU | Semiconductor Science and Technology | |||
2022 | Vertical hole transport through unipolar InGaN quantum wells and double heterostructures | Qwah K.S; Monavarian M; Ho W.Y; YUH-RENN WU ; Speck J.S. | Physical Review Materials | 2 | 0 |