公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
1994 | P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature | Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN | IEEE Electron Device Letters | 48 | 43 | |
1998 | Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs | Kuo, C.W.; Su, Y.K.; Tsia, C.Y.; HAO-HSIUNG LIN | Solid-State Electronics | 7 | 7 |