公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Cross-interaction between Ni and Cu across Sn layers with different thickness | Chang, C.W.; Yang, S.C.; Tu, C.-T.; C. ROBERT KAO | Journal of Electronic Materials | | | |
2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 6 | 0 | |
2019 | Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7 | Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Tsou, Y.-J.; Liu, Y.-C.; Tu, C.-T.; Liu, C.W.; CHEE-WEE LIU | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | 2 | 0 | |
2020 | Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02nGAAFETs | Lin, S.-Y.; Liu, H.-H.; Tu, C.-T.; Huang, Y.-S.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 2 | 2 | |