| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2018 | High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing | Tzu-Hung Liu; Yen Chuang; Po-Yuan Chiu; Chia-You Liu; Cheng-Hong Shen; Guang-Li Lou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 19 | 14 |
