公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 14 | 15 | |
2017 | Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer deposition | Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
2017 | Ultra-high thermal stability and extremely low D<inf>it</inf> on HfO<inf>2</inf>/p-GaAs(001) interface | Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 9 | 9 | |