公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy | Li, Nola; Wang, Shen-Jie; Huang, Chung-Lung; Feng, Zhe Chuan; Valencia, Adriana; Nause, Jeff; Summers, Christopher; Ferguson, Ian | Journal of Crystal Growth | | | |
2009 | Metalorganic chemical vapor deposition of GaN layers on ZnO substrates using Al2O3 as a transition layer | Wang, Shen-Jie; Li, Nola; Yu, Hong Bo; Feng, Zhe Chuan; Summers, Christopher; Ferguson, Ian | Journal of Physics D: Applied Physics | | | |
2007 | Metalorganic Chemical Vapor Deposition of InGaN Layers on ZnO Substrates | Wang, Shen-Jie; Li, Nola; Park, Eun-Hyun; Lien, Siou-Cheng; Feng, Zhe Chuan; Valencia, Adriana; Nause, Jeff; Ferguson, Ian | Journal of Applied Physics 102: | | | |
2008 | MOCVD growth of GaN-based materials on ZnO Substrates | Wang, Shen-Jie; Li, Nola; Park, Eun-Hyun; Feng, Zhe Chuan; Valencia, Adriana; Nause, Jeff; Kane, Matthew; Summers, Chris; Ferguson, Ian | physica status solidi (c) | | | |
2009 | Suppression of Phase Separation in InGaN layers Grown on Lattice Matched ZnO Substrates | Li, Nola; Wang, Shen-Jie; Park, Eun-Hyun; Feng, Zhe Chuan; Tsai, Hung-Lin; Yang, Jer-Ren ; Ferguson, Ian | Journal of Crystal Growth | 21 | 20 | |