公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2018 | Fast and accurate yield rate prediction of PCB embedded common-mode filter with artificial neural network | Y. T. Lin; C. H. Cheng; T. L. Wu; TZONG-LIN WU | IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (EMC/APEMC) | 5 | 0 | |
2006 | GaAsSbN grown on GaAs by gas source molecular beam epitaxy | T. C. Ma; T. Y. Chen; S. K. Chang; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2008 | GaAsSbN/GaAs long wavelength PIN detectors | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | |||
2010 | Hetero-epitaxy of InAs on patterened Si (100) substrates | Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | |||
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | |||
2007 | InAsPSb quaternary alloy grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | 10 | 9 | |
2006 | InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2007 | Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; L. C. Chou; HAO-HSIUNG LIN | 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials | 1 | 11 | |
2006 | Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; HAO-HSIUNG LIN | OPT 2006 | |||
2010 | Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin; T. C. Ma; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2005 | Low-power Variable-length Fast Fourier Transform Processor | Y. T. Lin; P. Y. Tsai; TZI-DAR CHIUEH | IEE Proceedings Computers & Digital Techniques | 84 | 44 | |
2012 | MBE growth of InAs nanowires on Si | L. H. Chen; Y. T. Lin; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | |||
2006 | Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | OPT2006 | |||
2009 | Nitrogen atomic rearrangement in thermally annealed GaAsSbN | Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN | OPT2009 | |||
2010 | Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy | H. P. Hsu; Y. S. Huang; Y. T. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Materials Chemistry and Physics | 7 | ||
2008 | Origin of the annealing-induced blue-shift in GaAsSbN | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | |||
2007 | Origin of the annealing-induced blue-shift in GaAsSbN bulk layers | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | OPT2007 | |||
2005 | Performance evaluation of field-enhanced p-channel split-gate flash memory | W. T. Chu; Y. H. Wang; C. T. Hsieh; Y. T. Lin; C. S. Wang; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | 2 | |
2006 | Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy | T. Y. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, | H. P. Hsu; Y. N. Huang; Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; K. K. Tiong; P. Sitarek; J. Misiewicz; HAO-HSIUNG LIN | Physica Status Solidi (A) Applications and Materials Science | 0 |