公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 13 | 14 | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Applied Physics Letters | 15 | 17 | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG | Journal of Applied Physics | 34 | 32 | |
2006 | Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001) | Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG | Applied Physics Letters | 25 | 26 | |
2005 | Thermodynamic stability of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) GaAs interface | Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | | 0 | |