公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2017 | Analysis of border and interfacial traps in ALD-Y<inf>2</inf>O<inf>3</inf> and -Al<inf>2</inf>O<inf>3</inf> on GaAs via electrical responses - A comparative study | Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 11 | 11 | |
2017 | Atomic layer deposited single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A | Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
2016 | Demonstration of large field effect in topological insulator films via a high-庥 back gate | Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 4 | 4 | |
2017 | Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y <inf>2</inf> O <inf>3</inf> /Al <inf>2</inf> O <inf>3</inf> on GaAs(001) | Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
2020 | Epitaxy from a periodic y–o monolayer: Growth of single-crystal hexagonal YALO<inf>3</inf> perovskite | Hong, M.; Cheng, C.-K.; Lin, Y.-H.; Young, L.B.; Cai, R.-F.; Hsu, C.-H.; Wu, C.-T.; MINGHWEI HONG ; CHIA-KUEN CHENG | Nanomaterials | 0 | 0 | |
2019 | Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO<inf>3</inf> on GaAs(111)A Using Laminated Atomic Layer Deposition | Young, L.B.; CHIA-KUEN CHENG ; Lin K.-Y; Lin Y.-H; Wan H.-W; Cai R.-F; Lo S.-C; Li M.-Y; Hsu C.-H; Kwo J; MINGHWEI HONG | Crystal Growth and Design | 3 | 3 | |
2019 | Fundamental Understanding of Oxide Defects in HfO<inf>2</inf> and Y<inf>2</inf>O<inf>3</inf> on GaAs(001) with High Thermal Stability | Wan, H.W.; Hong, Y.J.; Young, L.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | IEEE International Reliability Physics Symposium Proceedings | 0 | 0 | |
2018 | In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surface | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 3 | 3 | |
2017 | Interfacial characteristics of Y<inf>2</inf>O<inf>3</inf>/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition | Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 4 | 4 | |
2019 | Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum | Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 16 | 16 | |
2017 | Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer deposition | Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |