| Issue Date | Title | Author(s) | Type | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2004 | Hole effective mass in strained Si1-xCx alloys | Lin, C. Y.; Chang, S. T.; Liu, C. W. | journal article |  | ||
| 2000 | Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes | Liu, C. W.; Chang, S. T.; Liu, W. T.; Chen, Miin-Jang ; Lin, Ching-Fuh ; LiuCW ; ChenMiinJang ; LinChingFuh | journal article | | ||
| 2004 | Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S. T.; Chen, P. S.; Liu, C. W.; Lu, J.-H.; Kuan, C. H. | journal article | | ||
| 2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M. H.; Kuo, P.-S.; Jan, S.-R.; Chang, S. T.; Liu, C. W. | journal article | | ||
| 2002 | The band-edge light emission from the metal-oxide-silicon tunneling diode on (1 1 0) substrates | Chang, S. T.; CHING-FUH LIN ; Chen, K.F.; Chen, K. F.; CHEE-WEE LIU ; Shie, C. R.; Shie, C. R.; Liu, C. W.; Liu, C. W.; Chen, Miin-Jang ; Chen, Miin-Jang ; Lin, Ching-Fuh ; Lin, Ching-Fuh | journal article | 5 | 5 | |
| 2001 | Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures | Chen, Miin-Jang ; Lin, Ching-Fuh ; Liu, W. T.; Chang, S. T.; Liu, C. W. | journal article | |
