公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2018 | Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 15 | 14 | |
2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | | | |
2017 | Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design) | Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T. | Future Technologies Conference | 0 | 0 | |
2003 | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | IEEE Electron Device Letters | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. | Electron Devices Meeting, 2002. IEDM '02. Digest. International | 0 | 0 | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2010 | High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect | Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO | IEEE Photovoltaic Specialists Conference | | | |
2004 | Hole effective mass in strained Si<inf>1-x</inf>C<inf>x</inf> alloys | Lin, C.Y.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 8 | 6 | |
1997 | Illustration of photo-discoloration of wood coated with clear polyurethane | Chang, S.T.; Yeh, T. F.; SHANG-TZEN CHANG | Quarterly Jounal of Chinese Forestry | | | |
2010 | The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T. | IEEE Photovoltaic Specialists Conference | 0 | 0 | |
2003 | Mextram modeling of Si/SiGe heterojunction phototransistors | Yuan, F.; Pei, Z.; Shi, J.W.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | 3 | 0 | |
2003 | Modeling and simulation of high-bandwidth Si-based MOS/SOI photodetectors | Liang, C.Y.; Hsu, B.C.; Lin, C.H.; Chang, S.T.; Liu, C.W. | Semiconductor Device Research Symposium, 2003 International | 1 | 0 | |
2003 | MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses | Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; CHEE-WEE LIU | Semiconductor Device Research Symposium, 2003 International | 0 | 0 | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | | | |
Dec | Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si | CHING-FUH LIN ; MIIN-JANG CHEN ; Liang, Eih-Zhe; Liu, W.T.; Chang, S.T.; CHEE-WEE LIU | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 | |
2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2001 | Optimum Ge profile design for base transit time minimization of SiGe HBT | Chang, S.T.; Liu, C.W.; Lin, C.H. | Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific | 0 | 0 | |
2001 | Optimum Ge profile design for base transit time minimization of SiGe HBT | Chang, S.T.; Liu, C.W.; Lin, C.-H.; CHEE-WEE LIU | Asia-Pacific Microwave Conference Proceedings, APMC | | | |