公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C. ; Chen, K.H.; Santhakumar, K.; Soga, T. | Applied Physics Letters | 6 | 6 | |
2008 | Novel copper-zinc oxide arrayed nanoatalysts for hydrogen production applications | Lin, Y.G.; Hsu, Y.K.; Chen, S.Y.; Chen, L.C. ; Chen, K.H. | ECS Transactions | 1 | 0 | |
2007 | Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: H effects of nano-structural features | Lee, Z.S.; Feng, Z.C.; Tsai, H.; Yang, J.; Li, A.G.; Chen, L.C. ; Chen, K.H.; Chen, Y.F.; Ferguson, I.T.; JER-REN YANG ; YANG-FANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
2009 | Optical and structural properties of Mg-ion implanted GaN nanowires | Huang, P.J.; Chen, C.W.; Chen, J.Y.; Chi, G.C.; Pan, C.J.; Kuo, C.C.; Chen, L.C. ; Hsu, C.W.; Chen, K.H.; Hung, S.C.; Chang, C.Y.; Pearton, S.J.; Ren, F. | Vacuum | 11 | 11 | |
2005 | Optical characterization of GaN by N+ implantation into GaAs at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C. ; Chen, K.H.; Santhakumar, K.; Soga, T. | Applied Physics Letters | 14 | 13 | |
2005 | Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection | Chen, C.W. ; Huang, C.C.; Lin, Y.Y.; Chen, L.C.; Chen, K.H.; WEI-FANG SU | Diamond and Related Materials | 55 | 53 | |
2014 | Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire | Talwar, D.N.; Liao, Y.C.; Chen, L.C. ; Chen, K.H.; Feng, Z.C. | Optical Materials | 6 | 6 | |
2011 | Origin and tuning of surface optic and long wavelength phonons in biomimetic GaAs nanotip arrays | Huang, Y.-F.; Chattopadhyay, S.; Hsu, H.-C.; Wu, C.-T.; Chen, K.H.; Chen, L.-C. | Optical Materials Express | 1 | 1 | |
2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 33 | 29 | |
2012 | Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study | Chen, R.S.; Tsai, H.Y.; Huang, Y.S.; Chen, Y.T.; Chen, L.C. ; Chen, K.H. | Applied Physics Letters | 18 | 18 | |
2014 | Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties | Chen, R. S.; Wang, W.C.; Chan, C.H.; Lu, M.L.; Chen, Y.F. ; Lin, H.C.; Chen, K.H.; Chen, L.C. | Applied Physics Letters | 17 | 16 | |
2011 | Photoconduction mechanism of oxygen sensitization in InN nanowires | Chen, R.S.; Yang, T.H.; Chen, H.Y.; Chen, L.C. ; Chen, K.H.; Yang, Y.J.; Su, C.H.; Lin, C.R. | Nanotechnology | 11 | 11 | |
2017 | Photoconduction properties and anomalous power-dependent quantum efficiency in non-polar ZnO epitaxial films grown by chemical vapor deposition | Lin, C.H.; Chen, R.S.; Lin, Y.K.; Wang, S.B.; Chen, L.C. ; Chen, K.H.; Wen, M.C.; Chou, M.M.C.; Chang, L. | Applied Physics Letters | 9 | 9 | |
2016 | Photoconductivities in: M-plane and c-plane ZnO epitaxial films grown by chemical vapor deposition on LiGaO2 substrates: A comparative study | Lin, C.H.; Chen, R.S.; Lin, Y.K.; Wang, S.B.; LI-CHYONG CHEN ; Chen, K.H.; Wen, M.C.; Chou, M.M.C.; Chang L. | RSC Advances | 5 | 5 | |
2010 | Photoconductivity in single AlN nanowires by subband gap excitation | Huang, H.M.; Chen, R.S.; Chen, H.Y.; Liu, T.W.; Kuo, C.C.; Chen, C.P.; Hsu, H.C.; LI-CHYONG CHEN ; Chen, K.H.; YING-JAY YANG | Applied Physics Letters | 60 | 54 | |
2011 | Polarization-resolved fine-structure splitting of zero-dimensional In xGa1-xN excitons | Amloy, S.; Chen, Y.T.; Karlsson, K.F.; Chen, K.H.; Hsu, H.C.; Hsiao, C.L.; Chen, L.C. ; Holtz, P.O. | Physical Review B - Condensed Matter and Materials Physics | 23 | 24 | |
2012 | Polarized emission and excitonic fine structure energies of InGaN quantum dots | Karlsson, K.F.; Amloy, S.; Chen, Y.T.; Chen, K.H.; Hsu, H.C.; Hsiao, C.L.; Chen, L.C. ; Holtz, P.O. | Physica B: Condensed Matter | 1 | 1 | |
2011 | Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy | Chung, Y.L.; Peng, X.; Liao, Y.C.; Yao, S.; Chen, L.C. ; Chen, K.H.; Feng, Z.C. | Thin Solid Films | 5 | 4 | |
2008 | Recrystallization of epitaxial GaN under indentation | Dhara, S.; Das, C.R.; Hsu, H.C.; Raj, B.; Bhaduri, A.K.; Chen, L.C. ; Chen, K.H.; Albert, S.K.; Ray, A. | Applied Physics Letters | 13 | 14 | |
2002 | Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates | Liang, C.H.; Chen, L.C.; Hwang, J.S.; Chen, K.H.; Hung, Y.T.; Chen, Y.F.; YANG-FANG CHEN | Applied Physics Letters | 198 | 182 | |