2016 | Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack | Liu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H. | Japanese Journal of Applied Physics | 31 | 23 | |
2018 | Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMT | Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H. | 2018 7th International Symposium on Next-Generation Electronics | 0 | 0 | |