公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Low interfacial density of states around midgap in MBE-Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. | Journal of Crystal Growth | 2 | 2 | |
2014 | Observation of strongly enhanced inverse spin Hall voltage in Fe <inf>3</inf> Si/GaAs structures | Hung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; Lin, J. G. | Applied Physics Letters | 6 | 6 | |
2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 33 | 29 | |
2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 4 | 4 | |
2006 | 蓋斑鬥魚?子生成之組織超微研究 | ?忠翰; 江亭萱; 黃步敏; 王東晟; 楊西苑; Lee, T.H.; Chiang, T.H.; Huang, B.M.; Wang, T.C.; Yang, H.Y. | Taiwania | | | |