公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | H 2 S molecular beam passivation of Ge (001) | Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG | Microelectronic Engineering | | | |
2001 | HCP single crystal rare earth oxides on GaN | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JI; MINGHWEI HONG | APS Meeting Abstracts | | | |
2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | High $κ$ Gate Dielectrics for Compound Semiconductors | Kwo, J; Hong, M; MINGHWEI HONG | Advanced Gate Stacks for High-Mobility Semiconductors | | | |
1988 | High critical current superconducting Bi-Sr-Ca-Cu-O films by sputtering | Hong, M; Kwo, J; Yeh, J-J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2000 | High E gate dielectrics Gd2O3 and Y2O3 for silicon | Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers | Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | European Solid State Device Research Conference, 2009 | | | |
2006 | High performance micro-crystallized TaN/SrTiO3/TaN capacitors for analog and RF applications | Chiang, KC; Huang, CC; Chin, Albert; Chen, WJ; Kao, HL; Hong, M; Kwo, J; MINGHWEI HONG | 2006 Symposium on VLSI Technology, 2006 | | | |
2009 | High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric | Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; Hong, M; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2016 | High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer | Chen, KH; Lin, HY; Wang, CY; Yang, SR; Kwo, J; Cheng, CK; Hong, M; Zhang, XQ; Lee, YH; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
1988 | High T c superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; Hong, M; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others; MINGHWEI HONG | Thin Film Processing and Characterization of High-Temperature Superconductors | | | |
1988 | High T/sub c/superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; Hong, M; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others; MINGHWEI HONG | AIP Conference Proceedings | | | |
1995 | High-performance InGaAs photodetectors on Si and GaAs substrates | Ejeckam, FE; Chua, CL; Zhu, ZH; Lo, YH; Hong, M; Bhat, R; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG | Applied Physics Letters | | | |
2013 | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Lin, TD; Chang, WH; Chu, RL; Chang, YC; Chang, YH; Lee, MY; Hong, PF; Chen, Min-Cheng; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations | Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | J. Vacuum Science and Technology B | | | |
2008 | High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics | Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | Hong, M; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others; MINGHWEI HONG | Applied Physics Letters | | | |
2005 | High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111) | Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG | Applied Physics Letters | | | |
2006 | High-quality Thin Single-Crystal Y2O3 films Grown on Si (111) | Nieh, C-W; Lee, W-C; Yang, Z-K; Lee, Y-J; Cheng, Pen; Lin, T-D; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG | APS Meeting Abstracts | | | |