公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | 3 | |
2011 | Defect density reduction of the Al<inf>2</inf>O<inf>3</inf>/GaAs(001) interface by using H<inf>2</inf>S molecular beam passivation | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG | Surface Science | 10 | 8 | |
2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG | Thin Solid Films | 9 | 9 | |
1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Solid-State Electronics | 167 | 153 | |
2016 | Demonstration of large field effect in topological insulator films via a high-庥 back gate | Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 4 | 4 | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | IEEE Electron Device Letters | 60 | 57 | |
2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 11 | |
2005 | Depth profiling the electronic structures at HfO<inf>2</inf>/Si interface grown by molecular beam epitaxy | Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 6 | |
2005 | Depth-profile study of the electronic structures at Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) and Gd<inf>2</inf>O<inf>3</inf>-GaN interfaces by X-ray photoelectron spectroscopy | Lay, T.S.; Liao, Y.Y.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2013 | Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe <inf>3</inf>Si films with normal metals Au and Pt | Hung, H.Y.; Luo, G.Y.; Chiu, Y.C.; Chang, P.; Lee, W.C.; Lin, J.G.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; Lin, J. G. | Journal of Applied Physics | 23 | 21 | |
2011 | Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M. | Applied Physics Letters | 2 | 3 | |
2011 | Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
2011 | Direct measurement of interfacial structure in epitaxial Gd <inf>2</inf>O<inf>3</inf> on GaAs (0 0 1) using scanning tunneling microscopy | Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; YA-PING CHIU ; MINGHWEI HONG | Microelectronic Engineering | 2 | 2 | |
2009 | Domain matching epitaxial growth of high-quality ZnO film using a Y <inf>2</inf>O<inf>3</inf> buffer layer on Si (111) | Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Crystal Growth and Design | 36 | 34 | |
2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Chang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 19 | 19 | |
2007 | Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO<inf>2</inf> for gate dielectric applications | Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG | Journal of the Electrochemical Society | 40 | 37 | |
1998 | Effect of temperature on Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG | Applied Physics Letters | 217 | 209 | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Solid-State Electronics | 27 | 26 | |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |