公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | $\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2012 | $\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
1987 | Break-junction tunneling measurements of the high-T c superconductor Y 1 Ba 2 Cu 3 O 9- $δ$ | Morel; , John; Ekin, JW; Goodrich, LF; Capobianco, TE; Clark, AF; Kwo, J; Hong, M; Liou, Sy\\_Hwang; MINGHWEI HONG | Physical Review B | | | |
1987 | Break-junction tunneling measurements of the high-T/sub c/superconductor Y 1 Ba 2 Cu 3 O/sub 9-//sub $δ$ | Morel; , J; Ekin, JW; Goodrich, LF; Capobianco, TE; Clark, AF; Kwo, J; Hong, M; Liou, SH; MINGHWEI HONG | | | | |
1987 | Break-junction tunneling measurements of the high-T/sub c/superconductor Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 9-//sub delta | Morel; , J; Ekin, JW; Goodrich, LF; Capobianco, TE; Clark, AF; Kwo, J; Hong, M; Liou, SH; MINGHWEI HONG | Physics Review B: Condensed Matter | | | |
2010 | Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy Study | Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2000 | Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1997 | Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy | Hwang, Jenn-Shyong; Chou, WY; Chang, GS; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; MINGHWEI HONG | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
2008 | Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a $γ$-Al2O3 buffer layer | Liu, WR; Li, YH; Hsieh, Wen-Feng; Hsu, CH; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Physics D: Applied Physics | | | |
1988 | Crystal structure of the 80 K superconductor YBa2Cu4O8 | Marsh, P; Fleming, RM; M; ich, ML; DeSantolo, AM; Kwo, J; MINGHWEI HONG | Nature | | | |
2007 | Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2001 | CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density | Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
2001 | CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density | Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
2002 | DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG | 24th Annual Gallium Arsenide Integrated Circuit Symposium, 2002 | | | |
2010 | dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2010 | DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG | Jorurnal Vacuum Science and Technology B | | | |
2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG | Surface Science | | | |
2007 | Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering | Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG | Thin solid films | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG | Device Research Conference Digest 1997 | | | |