公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers | Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG | Solid-State Electronics | | | |
2012 | Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition | Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | | | |
2002 | Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing | Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs | Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
1989 | Electrical response of superconducting YBa 2 Cu 3 O/sub 7-//sub $δ$/to light | Brocklesby, WS; Monroe, D; Levi, AFJ; Hong, M; Liou, SH; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG | | | | |
1989 | Electrical response of superconducting YBa2Cu3O7- $δ$ to light | Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG | Applied Physics Letters | | | |
1988 | Electronic excitations of the Y Ba 2 Cu 3 O 7- x superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, Sy\\_Hwang; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | Physical Review B | | | |
1988 | Electronic excitations of the YBa 2 Cu 3 O 7√/sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, SH; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | | | | |
1988 | Electronic excitations of the YBa/sub 2/Cu/sub 3/O/sub 7/. sqrt./sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, SH; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | Physics Review B: Condensed Matter | | | |
2011 | Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study | Pi, T-W; Lee, WC; Huang, ML; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
1999 | Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | MRS Proceedings | | | |
2001 | Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG | APS Meeting Abstracts | | | |
2001 | Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | Solid-State Electronics | | | |
2009 | Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2006 | Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructure | Huang, ML; Chang, YC; Chang, CH; Lin, TD; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As | Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2007 | Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As | Zheng, JF; Tsai, W; Hong, M; Lin, TD; Chen, CP; Kwo, J; Wang, XW; Ma, TP; MINGHWEI HONG | MRS Spring Meeting | | | |
1996 | Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates | Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG | International Electron Devices Meeting, 1996 | | | |