公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1988 | Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y 2 Ba 5 Cu 7 O/sub x/films | Kwo, J; Hong, M; Fleming, RM; Hebard, AF; M; ich, ML; DeSantolo, AM; Davidson, BA; Marsh, P; Hobbins, ND; MINGHWEI HONG | | | | |
1988 | Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y2Ba5Cu7Ox films | Kwo, J; Hong, M; Fleming, RM; Hebard, AF; M; ich, ML; DeSantolo, AM; Davidson, BA; Marsh, P; Hobbins, ND; MINGHWEI HONG | Applied Physics Letters | | | |
1986 | Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice | Majkrzak, CF; Cable, JW; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Waszczak, JV; Vettier, C; MINGHWEI HONG | Physical Review Letters | | | |
1999 | Observation of Brillouin-zone folded magnon dispersion curves in magnetic superlattices by inelastic neutron scattering | Schreyer, A; Erwin, R; Lee, SH; Majkrzak, CF; Hong, M; Kwo, J; MINGHWEI HONG | European conference on neutron scattering ECNS'99 | | | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films | Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures | Hung, HY; Chiang, TH; Syu, BZ; Fanchiang, YT; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
1990 | Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions | Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG | Applied Physics Letters | | | |
1990 | Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions | Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1998 | Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance | Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | 6 | 6 | |
1988 | Oxygen defect in YBa 2 Cu 3 O x: An x-ray photoemission approach | Ford, WK; Chen, CT; erson, J; Kwo, J; Liou, Sy\\_Hwang; Hong, M; Rubenacker, GV; Drumheller, JE; MINGHWEI HONG | Physical Review B | | | |
1988 | Oxygen defect in YBa 2 Cu 3 O/sub x: An x-ray photoemission approach | Ford, WK; Chen, CT; erson, J; Kwo, J; Liou, SH; Hong, M; Rubenacker, GV; Drumheller, JE; MINGHWEI HONG | | | | |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2005 | Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, RL; Chiang, TH; Hsueh, WJ; Chen, KH; Lin, KY; Brown, GJ; Chyi, JI; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |