公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Solid-State Electronics | 27 | 26 | |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |
2010 | Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 63 | 60 | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
2002 | Electrical characteristics of ultrathin Pt/Y<inf>2</inf>O<inf>3</inf>/Si capacitor with rapid post-metallisation annealing | Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 0 | 0 | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 28 | 29 | |
2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
2001 | Energy-band parameters at the GaAs- and GaN-Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) interfaces | Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG | Solid-State Electronics | 83 | 81 | |
2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
2006 | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 181 | 175 | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 13 | |
2017 | Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y <inf>2</inf> O <inf>3</inf> /Al <inf>2</inf> O <inf>3</inf> on GaAs(001) | Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
2015 | Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface | Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Applied Physics Letters | 6 | 6 | |
2011 | Epitaxial stabilization of a monoclinic phase in Y<inf>2</inf>O<inf>3</inf> films on c-plane GaN | Chang, W.H.; Chang, P.; Lee, W.C.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 20 | 20 | |
2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
2019 | Evidence for exchange Dirac gap in magnetotransport of topological insulator-magnetic insulator heterostructures | Yang, S.R.; Fanchiang, Y.T.; Chen, C.C.; Tseng, C.C.; Liu, Y.C.; Guo, M.X.; Hong, M.; Lee, S.F.; Kwo, J.; MINGHWEI HONG | Physical Review B | 21 | 20 | |
2000 | Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd<inf>2</inf>O<inf>3</inf> on GaAs(001) | Nelson, E.J.; Woicik, J.C.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 12 | 10 | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG | Journal of Applied Physics | 3 | 4 | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG | Journal of Applied Physics | 3 | 4 | |
2013 | Ferromagnetism in cluster free, transition metal doped high 庥 dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 4 | |