公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | III-V MOSFET's with advanced high 庥 dielectrics | Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG | ECS Transactions | 0 | 0 | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | 2002 12th International Conference on Molecular Beam Epitaxy | 1 | 0 | |
- | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface | Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | 16 | 17 | |
2018 | In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surface | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 3 | 3 | |
2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures | Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanotechnology | 15 | 16 | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics | You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 8 | 10 | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 9 | |
2009 | InGaAs metal oxide semiconductor devices with Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) High-庥 dielectrics for science and technology beyond Si CMOS | Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG | MRS Bulletin | 34 | 33 | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M.; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y.; MINGHWEI HONG | Applied Physics Letters | 83 | 81 | |
2017 | Interfacial characteristics of Y<inf>2</inf>O<inf>3</inf>/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition | Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 4 | 4 | |
2013 | Interfacial electronic structure of trimethyl-aluminum and water on an In<inf>0.20</inf>Ga<inf>0.80</inf>As(001)-4 ? 2 surface: A high-resolution core-level photoemission study | Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Applied Physics | 7 | 7 | |
2018 | Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited) | Hong, M.; Lin, Y.H.; Wan, H.W.; Chen, W.S.; Cheng, Y.T.; Cheng, C.P.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings | 0 | 0 | |
2006 | Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>As | Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 142 | 124 | |
2011 | Intrinsic spin-dependent thermal transport | Huang, S.Y.; Wang, W.G.; Lee, S.F.; Kwo, J.; Chien, C.L.; SSU-YEN HUANG | Physical Review Letters | 235 | 225 | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al <inf>2</inf> O <inf>3</inf> as gate dielectrics | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Shiu, K.H.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | Device Research Conference | 1 | 0 | |
2013 | Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfaces | Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 24 | 22 | |